EVB90620 Datasheet, PDF (7/39 Pages) Melexis Microelectronic Systems – High precision non-contact temperature measurements

MLX90620
16x4 IR array
5 Electrical characteristics
All parameters are valid for T_A = 25˚C, V_DD =2.6V (unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Units
Supplies
External supply¹
VDD
2.5
2.6
Supply current
IDD
No load
5
Power On Reset
POR level
POR level
VPOR_up
Power-up (full temp range)
2
2.2
VPOR_down
Power –down (full temp range)
1.9
2.1
POR hysteresis
VDD rise time (10% to 90%
of specified supply voltage)
VPOR_hys
TPOR
Full temp range
Ensure POR signal
0.1
100
2.7
V
7
mA
2.4
V
2.3
V
V
s
Slave address
Input high voltage
Input low voltage
Output low voltage
I²C compatible 2-wire interface Sensor chip
SA
Factory default
60
hex
VIH (Ta, V)
VIL (Ta, V)
Over temperature and supply
Over temperature and supply
0.7VDD
V
0.3VDD V
VOL
SDA over temperature and
supply, Isink = 6mA (FM mode)
0.6
V
Output low voltage
VOL
SDA over temperature and
supply, Isink = 20mA (FM+ mode)
0.4
V
SCL leakage
SDA leakage
SCL capacitance
I²C clock frequency
ISCL, leak
ISDA, leak
CSCL
SCLIR
VSCL=4V, Ta=+85°C
VSDA=4V, Ta=+85°C
Two dies MLX90670 + EEPROM
MLX90620
Acknowledge setup time Tsuac(MD) 8-th SCL falling edge, Master
Acknowledge hold time Thdac(MD) 9-th SCL falling edge, Master
Acknowledge setup time Tsuac(SD)
8-th SCL falling edge, Slave
Acknowledge hold time Thdac(SD)
9-th SCL falling edge, Slave
EEPROM
Slave address
I²C clock frequency
Data retention
SA
SCLEEPROM
Factory default
EEPROM
Ta = +85°C
50
200
Erase/write cycles
Ta = +25°C
1M
Erase/write cycles
Ta = +125°C
100K
Erase cell time
T_erase
Write cell time
T_write
2
A
2
A
20
pF
1
MHz
0.45
s
0.45
s
0.45
s
0.45
s
hex
400
kHz
years
Times
Times
5
ms
5
ms
Table 4 Electrical specification parameters of MLX90620
1) The device can be supplied with VDD = 2.6…3.3V but the best performance is at VDD=2.6V
3001090620
Rev 4.0
Page 7 of 40
Datasheet IR16x4
19 September 2012