MLX92213 Datasheet, PDF (2/11 Pages) Melexis Microelectronic Systems – MicroPower & Low-Voltage Hall Effect Latch with Enable

1 Functional Diagram
MLX92213
MicroPower & Low-Voltage
Hall Effect Latch with Enable
2 General Description
The MLX92213 Micropower Low-Voltage Latch
Hall effect sensor IC is fabricated in mixed signal
CMOS technology. It incorporates advanced
Correlated Double Sampling (CDS) techniques to
provide accurate and stable magnetic switching
points.
In order to save power, the internal Timing Logic
alternates Awake and Sleep modes, thus
significantly reducing the power consumption. The
magnetic flux density is periodically evaluated
against predefined thresholds. If the flux density is
above/below the B_OP/B_RP thresholds, then the
Output changes its state accordingly. During the
Sleep mode the Output is latched in its previous
state. The design has been optimized for
applications requiring extended operating lifetime
in battery-powered systems. The EN pin adds
flexibility by enabling external control of the
Micropower Period and Duty Cycle.
The Push-pull Output of the MLX92213 will be
latched in Low state in the presence of a
sufficiently strong South magnetic field (B > B_OP)
facing the marked side of the package. The
Output will be latched in High state in the
presence of a sufficiently strong North magnetic
field (B < B_RP).
390109221302
Rev 003
Page 2 of 10
Data Sheet
Mar/12