MDT10P223 Datasheet, PDF (13/21 Pages) Micon Design Technology Corporation – 8-bit micro-controller

MDT10P223
11. Electrical Characteristics
(Operating temperature at 25℃).
Sym
Description
Condition
Min
Vdd Operating voltage
2.3
V_IL Input Low Voltage
PA, PB
Vdd=5V
-0.6
RTCC, /MCLR
Vdd=5V
-0.6
V_IH Input high Voltage
PA, PB
Vdd=5V
2.0
RTCC, /MCLR
Vdd=5V
3.3
I_IL Input leakage current
V_OL Output Low Voltage
PA, PB
V_OH Output High Voltage
PA, PB
I_slp Sleep current (WDT disable)
I_slp Sleep current (WDT enable)
Vdd=5V
Vdd=5V, I_OL=20mA
Vdd=5V, I_OL=5mA
Vdd=5V, I_OH= -20mA
Vdd=5V, I_OH= -5mA
V_dd＝2.3 ~ 6.0 V
V_dd＝2.3 V
V_dd＝3.0 V
V_dd＝4.0 V
V_dd＝5.0 V
V_dd＝6.0 V
V_pr Power Edge-detector Reset Low level
1.6
Voltage
Mid level
1.9
Twdt The basic WDT time-out cycle ^Vdd^{＝2.3 V}
time
V_dd＝3.0 V
V_dd＝4.0 V
V_dd＝5.0 V
V_dd＝6.0 V
T_FLT /MCLR filter
V_dd＝5.0 V
Icc Comparator Supply current Vdd=5.0v
(one comparator)
Vref Input reference voltage
Vdd=2.5v ~6.0v
Comparator Response time
V-=Vdd/4, V+=V- ± 0.2v
--- V-=Vdd/2, V+=V- ± 0.2v
Vdd=5.0v , V- = Vref
V+ = (PA0~PA3)
Typ Max Unit
6.0 V
1.0 V
1.0 V
Vdd V
Vdd V
+/-1 µA
0.5
V
0.2
V
3.4
V
4.5
V
0.1 1.0 μA
1
μA
1.2
μA
3.0
μA
5.0
μA
10
μA
1.8 V
2.1 V
28.5
mS
25.0
mS
21.9
mS
20.3
mS
19.1
mS
600
nS
15
μA
Vdd-0.8 V
v
8
μS
8
μS
This specification are subject to be changed without notice. Any latest information
Please visit http;//www.mdtic.com.tw
P.13
2010/06 Ver. 1.0