MX25U25635F Datasheet, PDF (84/96 Pages) Macronix International – 1.8V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY

MX25U25635F
Table 17. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V)
Symbol Alt. Parameter
Min.
fSCLK
Clock Frequency for the following instructions:
fC FAST_READ, RDSFDP, PP, SE, BE, CE, DP, RES, RDP,
WREN, WRDI, RDID, RDSR, WRSR
D.C.
fRSCLK fR Clock Frequency for READ instructions
fTSCLK
tCH⁽¹⁾
tCL⁽¹⁾
tCLCH⁽²⁾
tCHCL⁽²⁾
fT Clock Frequency for 2READ instructions
fQ Clock Frequency for 4READ instructions ⁽⁵⁾
tCLH Clock High Time
Others (fSCLK)
4.5/3.3 ⁽⁷⁾
Normal Read (fRSCLK)
7
tCLL Clock Low Time
Others (fSCLK)
4.5/3.3 ⁽⁷⁾
Normal Read (fRSCLK)
7
Clock Rise Time (peak to peak)
0.1
Clock Fall Time (peak to peak)
0.1
tSLCH tCSS CS# Active Setup Time (relative to SCLK)
5
tCHSL
CS# Not Active Hold Time (relative to SCLK)
7
tDVCH tDSU Data In Setup Time
2
tCHDX tDH Data In Hold Time
5
tCHSH
CS# Active Hold Time (relative to SCLK)
5
tSHCH
CS# Not Active Setup Time (relative to SCLK)
5
tSHSL tCSH CS# Deselect Time
tSHQZ⁽²⁾ tDIS Output Disable Time
Read
7
Write/Erase/Program
30
tCLQV
tV
Clock Low to Output Valid
Loading: 30pF/15pF
Loading: 30pF
Loading: 15pF
tCLQX tHO Output Hold Time
1
tWHSL⁽³⁾
Write Protect Setup Time
20
tSHWL⁽³⁾
Write Protect Hold Time
100
tDP⁽²⁾
CS# High to Deep Power-down Mode
tRES1⁽²⁾
tRES2⁽²⁾
CS# High to Standby Mode without Electronic Signature
Read
CS# High to Standby Mode with Electronic Signature Read
tW
Write Status/Configuration Register Cycle Time
tWREAR
Write Extended Address Register
tBP
Byte-Program
tPP
Page Program Cycle Time
tSE
Sector Erase Cycle Time
tBE32
Block Erase (32KB) Cycle Time
tBE
Block Erase (64KB) Cycle Time
tCE
Chip Erase Cycle Time
Typ.
40
12
1
45
200
400
200
Max. Unit
108 ⁽⁶⁾ MHz
55
84 ⁽⁶⁾
84 ⁽⁶⁾
8
8
6
10
10
10
40
30
3
200
1000
2000
320
MHz
MHz
MHz
ns
ns
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
us
ms
ns
us
ms
ms
ms
ms
s
P/N: PM1712
REV. 1.2, NOV. 28, 2013
84