MX29NS640E Datasheet, PDF (66/70 Pages) Macronix International – 128/64/32M-BIT [8/4/2M x16-bit] CMOS 1.8 Volt-only,

MULTIPLEXED, Burst Mode, Flash Memory
10-5. Erase and Programming Performance
PARAMETER
Chip Programming Time (32Mb)
Chip Programming Time (64Mb)
Chip Programming Time (128Mb)
Chip Erase Time (32Mb)
Chip Erase Time (64Mb)
Chip Erase Time (128Mb)
Sector Erase Time (32KW)
Sector Erase Time (64KW)
Word Program Time
Total Write Buffer Time
ACC Total Write Buffer Time
Erase/Program Cycles
Effective Word Programming Time
MIN.
LIMITS
TYP. (1)
20
40
80
32
64
128
0.6
0.8
40
300
150
100,000
9.4
MAX. (2)
75
150
300
5
7
360
UNITS
sec
sec
sec
sec
sec
sec
sec
sec
us
us
us
cycles
us
NOTES:
1. Typical program and erase times assume the following conditions: 25°C, 1.8V VCC.
Programming specifications assume checkboard data pattern.
2. Maximum values are measured at VCC = 1.8 V, worst case temperature. Maximum
values are valid up to and including 100,000 program/erase cycles.
3. Erase/Program cycles comply with JEDEC JESD-47E & A117A standard.
4. Exclude 00h program before erase operation.
5. Not 100% tested.
Data Retention
PARAMETER
Data retention
Condition
55˚C
Min.
20
Max.
Latch-up Characteristics
MIN.
Input Voltage voltage difference with GND on ACC pins
-1.0V
Input Voltage voltage difference with GND on all normal pins input
-1.0V
Vcc Current
-100mA
All pins included except Vcc. Test conditions: Vcc = 1.8V, one pin per testing
Pin Capacitance
Parameter Symbol
CIN2
COUT
CIN
Parameter Description Test Setup
Control Pin Capacitance
Output Capacitance
Input Capacitance
VIN=0
VOUT=0
VIN=0
TYP
7.5
8.5
6
MAX
9
12
7.5
UNIT
years
MAX.
10.5V
1.5Vcc
+100mA
UNIT
pF
pF
pF
P/N: PM1585
REV. 1.1, APR. 26, 2011
66