MX26F640J3 Datasheet, PDF (37/47 Pages) Macronix International – 64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY

R
MX26F640J3
AC Characteristics --Read-Only Operations (1,2)
Versions
(All units in ns unless otherwise noted)
Sym
Parameter
tAVAV
Read/Write Cycle Time
tAVQV
Address to Output Delay
tELQV
CEX to Output Delay
tGLQV
OE to Non-Array Output Delay
tPHQV
RESET High to Output Delay
tELQX
CEX to Output in Low Z
tGLQX
OE to Output in Low Z
tEHQZ
CEX High to Output in High Z
tGHQZ
OE High to Output in High Z
tOH
Output Hold from Address, CEX, or OE
Change, Whichever Occurs First
tELFL/tELFH CEX Low to BYTE High or Low
tFLQV/tFHQV BYTE to Output Delay
tFLQZ
BYTE to Output in High Z
tEHEL
CEx High to CEx Low
tAPA
Page Address Access Time
tGLQV
OE to Array Output Delay
VCC
VCCQ
Notes
2, 4
5
5
5
5
5
5
5
5
5, 6
4
3.0V-3.6V(3)
3.0V-3.6V(3)
Min
Max
100
100
100
50
210
0
0
35
15
0
10
1000
1000
0
25
25
NOTES:CEX low is defined as the first edge of CE0 , CE1 , or CE2 that enables the device. CEX high is defined at
the first edge of CE0, CE1, or CE2 that disables the device (see Table 2).
1. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
2. OE may be delayed up to t ELQV -t GLQV after the first edge of CE0, CE1, or CE2 that enables the device (see
Table 2) without impact on t ELQV .
3. See Figures 14-16, Transient Input/Output Reference Waveform for VCCQ = 3.0V - 3.6V, Transient Equivalent
Testing Load Circuit for testing characteristics. VCC = 3.0V - 3.6V.
4. When reading the eLiteFlash^TM memory array a faster tGLQV (R16) applies. Non-array reads refer to status register
reads, query reads, or device identifier reads.
5. Sampled, not 100% tested.
6. For devices configured to standard word/byte read mode, R15 (tAPA) will equal R2 (tAVQV).
P/N:PM1114
REV. 0.00, JUN. 30, 2004
37