MX26F640J3 Datasheet, PDF (1/47 Pages) Macronix International – 64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY

ADVANCED INFORMATION
R
MX26F640J3
Macronix NBit^TM Memory Family
64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash^TM MEMORY
FEATURES
• 3.0V to 3.6V operation voltage
• Block Structure
- 64 x 128Kbyte Erase Blocks
• Fast random / page mode access time
- 100/25 ns Read Access Time
• Page Depth: 8-word
• 128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User Programmable OTP Cells
• 32-Byte Write Buffer
- 6 us/byte Effective Programming Time
• Enhanced Data Protection Features Absolute Protec-
tion with VPEN = GND
- Flexible Block Locking
- Block Erase/Program Lockout during Power Transi-
tions
Software Feature
• Support Common Flash Interface (CFI)
- eLiteFlash^TM memory device parameters stored on
the device and provide the host system to access.
Hardware Feature
• A0 pin
- Select low byte address when device is in byte mode.
Not used in word mode.
• STS pin
- Indicates the status of the internal state machine.
• VPEN pin
- For Erase /Program/ Block Lock enable.
• VCCQ Pin
- The output buffer power supply, control the device 's
output voltage.
Performance
• Low power dissipation
- typical 15mA active current for page mode read
- 80uA/(max.) standby current
• High Performance
- Block erase time: 2s typ.
- Byte programming time: 210us typ.
- Block programming time: 0.8s typ. (using Write to
Buffer Command)
• Program/Erase Endurance cycles: 100 cycles
Packaging
- 56-Lead TSOP
- 64-ball CSP
Technology
- 0.25u Macronix NBit^TM Flash Technology
P/N:PM1114
REV. 0.00, JUN. 30, 2004
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