MX10F201FC Datasheet, PDF (31/47 Pages) Macronix International – High-Performance and Low Power Microcontroller designed for Use Many Applications

MX10F201FC
MTP Program Memory
Features
- 16 kilobyte electrically erasable internal MTP program momory.
- Programming and erasing voltage 12 Volt
- MTP (re) programming mechanism :
- EPROM like parallel programming protocol
- Parallel programming :
- Byte programming (8 us typical)
- Chip erase less than 0.5 second typical
- 100 minimum erase/program cycles
- Advanced CMOS flash memory technology
- One security bit to protect internal ROM code.
General Description
MX10F201FC's MTP memory stores memory contents even after 100 erase and program cycles. The cell is
designed to optimize the erase and programming mechanisms. In addition, the combination of advanced tunnel
oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.
The MX10F201FC uses 12 Volt VPP supply to perform the Program/Erase algorithms.
PROGRAMMING AND PROGRAM VERIFY
MX10F201FC is byte programmable by using 10us programming pulse and it requires separate program verify
pulse to read out the data to check if program is ok or not. The typical programming time for each 1k bytes is
about 10ms at room temperature.
P/N:PM0730
REV. 0.1, FEB. 14, 2003
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