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MX69F162 Datasheet, PDF (1/51 Pages) Macronix International – 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY | |||
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ADVANCED INFORMATION
MX69F162/164C3BT/B
FEATURES
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM
MIXED MULTI CHIP PACKAGE MEMORY
⢠Supply voltage range: 2.7V to 3.6V
⢠Fast access time: Flash memory:70/90ns
SRAM memory:70/85ns
⢠Operation temperature range: -40 ~ 85° C
⢠Fully compatible with MX69F1602/1604C3T/B device
FLASH
⢠Word mode only
⢠VCCf=VCCQ=2.7V~3.6V for read, erase and program
operation
⢠VPP=12V for fast production programming
⢠Low power consumption
- 9mA typical active read current, f=5MHz
- 18mA typical program current (VPP=1.65~3.6V)
- 21mA typical erase current (VPP=1.65~3.6V)
- 7uA typical standby current under power saving mode
⢠Sector architecture
- Sector structure : 4Kword x 2 (boot sectors), 4Kword
x 6 (parameter sectors), 32Kword x 31 (main sectors)
- Top/Bottom Boot
⢠Auto Erase and Auto Program
- Automatically program and verify data at specified
address
- Auto sector erase at specified sector
⢠Automatic Suspend Enhance
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
⢠Automatic sector erase, word write and sector lock/
unlock configuration
⢠100,000 minimum erase/program cycles
⢠Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
⢠Status Register feature for detection of program or
erase cycle completion
⢠Data protection performance
- Sectors to be locked/unlocked
⢠Common Flash Interface (CFI)
⢠128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
⢠Latch-up protected to 100mA from -1V to VCC+1V
SRAM
⢠MX69F162C3BT/B: 128K wordx16 Bit
⢠MX69F164C3BT/B: 256K wordx16 Bit
⢠70mA maximum active current
⢠1uA typical standby current
⢠Data retention supply voltage: 2.0V~3.6V
⢠Byte data control : LBs#(Q0 to Q7) and UBs#(Q8 to
Q15)
P/N:PM1083
REV. 0.2, MAY 20, 2004
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