MX29LV640BU Datasheet, PDF (1/64 Pages) Macronix International – 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY

MX29LV640BU
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
GENERAL FEATURES
• 4,194,304 x 16 byte structure
• One hundred twenty-eight Equal Sectors with 32K
word each
- Any combination of sectors can be erased with erase
suspend/resume function
• Sector Protection/Chip Unprotect
- Provides sector group protect function to prevent
program or erase operation in the protected sector
group
- Provides chip unprotect function to allow code
changes
- Provides temporary sector group unprotect function
for code changes in previously protected sector groups
• Secured Silicon Sector
- Provides a 128-word area for code or data that can
be permanently protected.
- Once this sector is protected, it is prohibited to pro-
gram or erase within the sector again.
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program opera-
tions
• Latch-up protected to 250mA from -1V to Vcc + 1V
• Low Vcc write inhibit is equal to or less than 1.5V
• Compatible with JEDEC standard
- Pinout and software compatible to single power sup-
ply Flash
SOFTWARE FEATURES
• Support Common Flash Interface (CFI)
- Flash device parameters stored on the device and
provide the host system to access.
• Erase Suspend/ Erase Resume
- Suspends sector erase operation to read data from
or program data to another sector which is not being
erased
• Status Reply
- Data# polling & Toggle bits provide detection of pro-
gram and erase operation completion
HARDWARE FEATURES
• Ready/Busy (RY/BY#) Output
- Provides a hardware method of detecting program
and erase operation completion
• Hardware Reset (RESET#) Input
- Provides a hardware method to reset the internal
state machine to read mode
• ACC input pin
- Provides accelerated program capability
• WP# pin
- At V_IL, allows protection of first sector, regardless of
sector protection/unprotected status
- At V_IH, allows removal of protection
PERFORMANCE
• High Performance
- Access time: 90/120ns
- Program time: 11us/word, 45s/chip (typical)
- Erase time: 0.9s/sector, 45s/chip (typical)
• Low Power Consumption
- Low active read current: 9mA (typical) at 5MHz
- Low standby current: 0.2uA(typ.)
• Minimum 100,000 erase/program cycle
• 20-year data retention
PACKAGE
• 48-pin TSOP
• 63-ball CSP
GENERAL DESCRIPTION
The MX29LV640BU is a 64-mega bit Flash memory or-
ganized as 4M bytes of 16 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV640BU is
packaged in 48-pin TSOP and 63-ball CSP. It is designed
to be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29LV640BU offers access time as fast
as 90ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV640BU has separate chip enable (CE#) and
output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
P/N:PM1081
REV. 1.0, MAR. 08, 2005
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