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| BC857S Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | |||
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BC857S
MCC
TM
Micro Commercial Components
ELECTRICAL C HARACTERISTICS(Tamb=25Я unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic=-10µA,IE=0
-50
Collector-emitter breakdown voltage
V(BR)CEO Ic=-10mA,IB=0
-45
Emitter-base breakdown voltage
V(BR)EBO IE=-10µA,IC=0
-5
Collector cut-off current
ICBO
VCB=-30V,IE=0
DC current gain
hFE
VCE=-5V,IC=-2mA
125
Collector-emitter saturation voltage
VCE(sat)(1) IC=-10mA,IB=-0.5mA
VCE(sat)(2) IC=-100mA,IB=-5mA
Base-emitter voltage
Transition frequency
VBE(1) VCE=-5V,IC=-2mA
-0.6
VBE(2) VCE=-5V,IC=-10mA
fT
VCE=-5V,IC=-10mA,f=100MHz
Collector output capacitance
Noise figure
Cob
VCB=-10V,IE=0,f=1MHz
VCE=-5V,Ic=-0.2mA,
NF
f=1kHZ,Rs=2KÈ,BW=200Hz
TYP MAX UNIT
V
V
V
-15
nA
630
-0.3
V
-0.65 V
-0.75 V
-0.82 V
200
MHz
3.5
pF
2.5
dB
Revision: A
www.mccsemi.com
2 of 5
2011/01/01
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