BC857S Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

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BC857S
Features
x Multi-chip Transistor
x Ultra-Small Surface Mount Package
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Mechanical Data
•_ Case: SOT-363
• Marking: 3C
Maximum Ratings @ 25^oC Unless Otherwise Specified
Symbol
Parameter
Value
OFF CHARACTERISTICS
I_CM
Peak Collector Current
-200
V(BR)CBO
Collector-base Voltage
-50
P_d
Power Dissipation @ T_A=25^oC
300
T_J, T_STG
Operating & Storage Temperature
-55~+150
Units
mA
V
mW
o_C
PNP
Plastic-Encapsulate
Transistors
300mW
SOT-363
G
B
C
A
H
K
M
J
D
L
C1
B2
E2
E1
BC857S
B1
C2
Structure schematic diagram
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.014
0.15
0.35
B
.045
.053
1.15
1.35
C
.085
.096
2.15
2.45
D
.026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Revision: A
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2011/01/01