BAS85 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier diode

BAS85
200
180 VR = 30 V
160
140
120
R_thJA = 540 K/W
P_R - Limit
100
@ 100% V_R
80
60
P_R - Limit
40
@ 80% V_R
20
0
25
50
75 100 125 150
15822
T_j - Junction Temperature ( ° C )
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
100
10
1
T_j = 150 ° C
T_j = 25 ° C
0.1
0
15824
0.5
1.0
1.5
V_F - Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
MCC
TM
Micro Commercial Components
1000
V_R = V _RRM
100
10
1
25
15823
50
75 100 125 150
T_j - Junction Temperature ( ° C )
Figure 2. Reverse Current vs. Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
0.1
15825
f = 1 MHz
1
10
100
V_R - Reverse Voltage ( V )
Figure 4. Diode Capacitance vs. Reverse Voltage
Revision: A
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2 of 3
2011/01/01