BAS85 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier diode

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Features
• Moisture Sensitivity Level 1
• This diode features low turn-on voltage
• The devices are protected by a PN junction guard ring against
excessive voltage, such as electrostatic discharges
• This diode is also available in a DO-35 case with type designation
BAT85
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Maximum Ratings
Symbol
VR
IF
IFM
IFSM
Ptot
RJA
TJ
TSTG
Rating
Continuous Reverse Voltage
Forward DC Current at Tamb=25℃
Repetitive Peak Forward Current Tamb=25℃
Surge Forward Current at tp<1s, Tamb=25℃
Power Dissipation at Tamb=65℃
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature
Rating
30
200⁽²⁾
300⁽²⁾
600⁽²⁾
200⁽²⁾
430⁽²⁾
125
-55 to +150
Unit
V
mA
mA
mA
mW
℃/W
℃
℃
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max Units
V(BR)R
Reverse Breakdown Voltage
(IR=10µAdc Pulsed)
30
---
---
V
Forward Voltage
IF=0.1mA, Pulse test tp<300μs
VF
IF=1.0mA, Pulse test tp<300μs
IF=10mA, Pulse test tp<300μs
IF=30mA, Pulse test tp<300μs
---
---
0.24
---
---
0.32
---
---
0.40
V
---
0.5
---
---
---
0.80
IF=100mA, Pulse test tp<300μs
IR
Leakage Current ⁽³⁾
(VR=25Vdc)
---
0.2
2.0
µA
Ctot
Capacitance
(VR=1.0V, f=1.0MHz)
---
---
10
pF
trr
Reverse Recovery Time
(IF=10mA, IR=10mA, Irr=1.0mA)
---
---
5.0
ns
Notes:1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Valid provided that electrodes are kept at ambient temperature
BAS85
200mW
Small Signal Schottky
Barrier Diodes
30 Volts
MINIMELF
Cathode Mark
C
B
A
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.130
.146
B
.008
.016
C
.055
.059
MM
MIN
3.30
.20
1.40
MAX
3.70
.40
1.50
NOTE
∅
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.030”
Revision: A
www.mccsemi.com
1 of 3
2011/01/01