2N4402 Datasheet, PDF (2/5 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon)

2N4402
Symbol
Parameter
ON CHARACTERISTICS*
h_FE
V_CE(sat)
VBE(sat)
DC Current Gain
(VCE=1.0Vdc, IC=1.0mAdc)
(V_CE=1.0Vdc, I_C=10mAdc)
(V_CE=2.0Vdc, I_C=150mAdc)
(V_CE=2.0Vdc, I_C=500mAdc)
Collector-Emitter Saturation Voltage
(I_C=150mAdc, I_B=15mAdc)
(I_C=500mAdc, I_B=50mAdc )
Base-Emitter Saturation Voltage
(I_C=150mAdc, I_B=15mAdc)
(IC=500mAdc, IB=50mAdc )
SMALL-SIGNAL CHARACTERISTICS
COB
Output Capacitance
(V_CB=10Vdc, f=140KHz)
CIB
Input Capacitance
(V_EB=0.5Vdc, f=140KHz)
h_fe
Small-Signal Current Gain
(I_C=20mAdc, V_CE=10Vdc, f=100MHz )
h_fe
Small-Signal Current Gain
(I_C=1.0mAdc, V_CE=10Vdc, f=1.0KHz )
h_ie
Small-Signal Current Gain
(IC=1.0mAdc, VCE=10Vdc, f=1.0KHz )
h_re
Small-Signal Current Gain
(IC=1.0mAdc, VCE=10Vdc, f=1.0KHz )
h_oe
Small-Signal Current Gain
(IC=1.0mAdc, VCE=10Vdc, f=1.0KHz )
SWITCHING CHARACTERISTICS
Td
Delay Time
t_r
Rise Time
VCC=30Vdc, IC=150mAdc,
I_B1=15mAdc, V_BE(off)=2.0Vdc
ts
Storage Time
t_f
Fall Time
VCC=30Vdc, IC=150mAdc,
I_B1=I_B2=15mAdc
* Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
MCC
TM
Micro Commercial Components
Min
Max
Units
30
50
---
50
150
20
---
0.40
Vdc
---
0.75
Vdc
0.75
0.95
Vdc
1.30
Vdc
---
8.5
pF
---
30
pF
1.5
---
---
30
250
---
0.75
7.5
KOHM
0.10
8.0
X 10^-4
1.0
100
umhos
---
15
ns
---
20
ns
---
225
ns
---
30
ns
Revision: A
www.mccsemi.com
4 of 5
2011/01/01