2N4402 Datasheet, PDF (1/5 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon)

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2N4402
Features
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking:Type number
• Lead Free Finish/Rohs Compliant ("P" Suffix designates
Compliant. See ordering information)
Maximum Ratings*
Symbol
Rating
V_CEO
V_CBO
V_EBO
I_C
T_J
T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Thermal Characteristics
Rating
Unit
40
V
40
V
5.0
V
600
mA
-55 to +150
O_C
-55 to +150
O_C
Symbol
P_D
R_{J C}
R_JA
Rating
Total Device Dissipation
Derate above 25^OC
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
625
5.0
83.3
200
Unit
mW
mW/^OC
O_C/W
O_C/W
PNP General
Purpose Amplifier
TO-92
A
E
B
C
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symb ol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(I_C=1.0mAdc, I_B=0)
40
---
V(BR)CBO
Collector-Base Breakdown Voltage
(I_C=100ì Adc, I_E=0)
40
---
V(BR)EBO
Emitter-Base Breakdown Voltage
(I_E=100ì Adc, I_C=0)
5.0
---
I_CEX
Collector Cutoff Current
(V_CE=35Vdc, V_EB=0.4Vdc)
---
0.1
I_BL
Base Cutoff Current
(V_CE=35Vdc, V_EB=0.4Vdc)
---
0.1
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
Vdc
Vdc
Vdc
uAdc
uAdc
D
E
G
BC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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1 of 5
2011/01/01