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69F1608_08 Datasheet, PDF (5/33 Pages) Maxwell Technologies – 128 Megabit (16M x 8-Bit) Flash Memory Module
128 Megabit (16M x 8-Bit) Flash Memory Module
69F1608
TABLE 8. 69F1608 MODE SELECTION
CLE
ALE
CE
WE
RE
SE
WP
H
L
L
H
X
H Write Mode
MODE
Command Input
L
H
L
L
L
L
H
X
H
H
L/H 1
H Data Input
Address Input (3
Clock)
L
L
L
H
L/H 1
X Sequential Read & Data Output
L
L
L
H
H
L/H 1
X During Read (Busy)
X
X
X
X
X
L/H 1
H During Program (Busy)
X
X
X
X
X
X
H During Erase (Busy)
X
X2
X
X
X
X
L Write Protect
X
X
H
X
X
0V/VCC3 0V/VCC3 Stand-by
1. When SE is high, spare area is deselected.
2. X can be VIL or VIH.
3. WP should be biased to CMOS high or CMOS low for standby.
TABLE 9. 69F1608 PROGRAM/ERASE CHARACTERISTICS
(VCC = 5 V ± 10%, TA =-40 TO +125C, UNLESS OTHERWISE NOTED)
PARAMETER
SYMBOL
MIN
TYP
MAX
Program time
tPROG
--
0.25
1.5
Number of partial program cycles in the same page
NOP
--
--
10
Block erase time
tBERS
--
2
10
UNIT
ms
cycles
ms
03.07.08 REV 3
All data sheets are subject to change without notice 5
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