MAX14589E Datasheet, PDF (9/11 Pages) Maxim Integrated Products – High-Density, ±5V Capable DPDT Analog Switches

MAX14589E/MAX14594E
High-Density, ±5V Capable DPDT Analog Switches
Detailed Description
The MAX14589E/MAX14594E are low on-resistance
and high ESD-protected DPDT switches that operate
from a +1.6V to +5.5V supply and are designed to
multiplex AC-coupled analog signals. These switches
feature the low on-resistance (R_ON) necessary for high-
performance switching applications. The Beyond-the-
Rails signal capability of the analog channel allows
signals below ground and above V_CCEN to pass through
without distortion.
Analog Signal Levels
The devices are bidirectional, allowing NO_, NC_, and
COM_ to be configured as either inputs or outputs. The
topology of the internal switches allows the signal to
drop below ground without the need of an external nega-
tive voltage supply. Note: The devices can withstand
analog signal levels of -5.5V to +5.5V when the device
is not powered.
Digital Control Input
The devices provide a single-bit control logic input, CB.
CB controls the switch position, as shown in the Typical
Application Circuits/Functional Diagrams.
Click-and-Pop Suppression
(MAX14594E Only)
The 500I shunt resistors automatically discharge any
capacitance at both NO_ terminals when they are not
connected to COM_. This reduces audio click-and-pop
R_C
R_D
1MΩ
1.5kΩ
CHARGE-CURRENT- DISCHARGE
LIMIT RESISTOR
RESISTANCE
HIGH-
VOLTAGE
DC
SOURCE
CS
100pF
STORAGE
CAPACITOR
DEVICE
UNDER
TEST
Figure 3. Human Body ESD Test Model
sounds that might occur when switching between capac-
itively coupled audio sources.
The shunt resistors are controlled by CB. When CB is low,
NC_ is connected to COM_ and NO_ is connected to the
shunt resistors. When CB is high, NO_ is connected to
COM_ and the shunt resistors are unconnected.
Applications Information
Extended ESD Protection
ESD-protection structures are incorporated on all pins
to protect against electrostatic discharges up to ±2kV
(HBM) encountered during handling and assembly.
COM1 and COM2 are further protected against ESD up
to ±15kV (HBM), ±10kV (Air-Gap Discharge), and ±8kV
(Contact Discharge) without damage. NO_ and NC_ are
further protected against ESD up to ±15kV (HBM) without
damage. The ESD structures withstand high ESD both in
normal operation and when the device is powered down.
After an ESD event, the devices continue to function
without latchup.
ESD Test Conditions
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report that documents test
methodology and test results.
Human Body Model
Figure 3 shows the Human Body Model. Figure 4 shows
the current waveform it generates when discharged
into a low impedance. This model consists of a 100pF
capacitor charged to the ESD voltage of interest that is
then discharged into the device through a 1.5kI resistor.
IEC 61000-4-2
The IEC 61000-4-2 standard covers ESD testing and
performance of finished equipment. It does not spe-
cifically refer to integrated circuits. The major difference
between tests done using the HBM and IEC 61000-4-2
is higher peak current in IEC 61000-4-2, because series
resistance is lower in the IEC 61000-4-2 model. Hence,
the ESD withstand voltage measured to IEC 61000-4-2
is generally lower than that measured using the HBM.
Figure 4 shows the IEC 61000-4-2 model and Figure 5
shows the current waveform for the ±8kV, IEC 61000-4-2,
Level 4, ESD Contact-Discharge Method.
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