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MAX15012 Datasheet, PDF (5/14 Pages) Maxim Integrated Products – 175V/2A, High-Speed, Half-Bridge MOSFET Drivers
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175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
Typical Operating Characteristics
(Typical values are at VDD = VBST = +12V and TA = +25°C, unless otherwise specified.)
UNDERVOLTAGE LOCKOUT
(VDD AND VBST RISING) vs. TEMPERATURE
7.5
7.4
7.3
UVLOVDD
7.2
7.1
7.0
6.9
UVLOBST
6.8
6.7
6.6
6.5
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
VDD AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
1.0
0.9
0.8
0.7
UVLOVDD
0.6
HYSTERESIS
0.5
UVLOBST
0.4
HYSTERESIS
0.3
0.2
0.1
0
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
IDD vs. VDD
IN_H = GND
IN_L = VDD
0V
0µA
4ms/div
MAX15012/13 toc03
VDD
2V/div
IDD
50µA/div
IDDO + IBSTO vs. VDD
(fSW = 250kHz)
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VDD (V)
VDD QUIESCENT CURRENT
vs. VDD (NO SWITCHING)
160
VDD = VBST
140 VHS = GND
IN_H = GND
120 IN_L = VDD
100
TA = +125°C
80
TA = +25°C
60
40
20
TA = -40°C
0
0 2 4 6 8 10 12
VDD (V)
INTERNAL BST DIODE
(I-V) CHARACTERISTICS
200
180
160
TA = +125°C
140
TA = +25°C
120
TA = 0°C
TA = -40°C
100
80
60
40
20
0
0.5 0.6 0.7 0.8 0.9 1.0 1.1
VDD - VBST (V)
BST QUIESCENT CURRENT
vs. BST VOLTAGE
21
VBST = VDD + 1V,
18 NO SWITCHING
15
12
TA = +125°C
9
6
3
TA = -40°C, TA = 0°C, TA = +25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VBST (V)
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