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| MAX15012 Datasheet, PDF (2/14 Pages) Maxim Integrated Products – 175V/2A, High-Speed, Half-Bridge MOSFET Drivers | |||
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175V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
VDD, IN_H, IN_L......................................................-0.3V to +14V
DL ...............................................................-0.3V to (VDD + 0.3V)
HS............................................................................-5V to +180V
DH to HS.....................................................-0.3V to (VDD + 0.3V)
BST to HS ...............................................................-0.3V to +14V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (TA = +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VDD = VBST = +8V to +12.6V, VHS = GND = 0V, TA = TJ = -40°C to +125°C, unless otherwise noted. Typical values are at VDD =
VBST = +12V and TA = +25°C.) (Note 1)
PARAMETER
POWER SUPPLIES
Operating Supply Voltage
VDD Quiescent Supply Current
(No Switching)
VDD Operating Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
UVLO (VDD to GND)
UVLO (BST to HS)
UVLO Hysteresis
LOGIC INPUT
Input-Logic High
Input-Logic Low
Logic-Input Hysteresis
SYMBOL
CONDITIONS
VDD
IDD
IDDO
IBST
IBSTO
UVLOVDD
UVLOBST
(Notes 2 and 3)
IN_H = IN_L = GND (for A version),
IN_H = GND, IN_L = VDD (for B version)
fSW = 500kHz, VDD = +12V
IN_H = IN_L = GND (for A version),
IN_H = GND, IN_L = VDD (for B version)
fSW = 500kHz, VDD = VBST = +12V
VDD rising
BST rising
VIH_
VIL_
VHYS
MAX15012_, CMOS (VDD / 2) version
MAX15013_, TTL version
MAX15012_, CMOS (VDD / 2) version
MAX15013_, TTL version
MAX15012_, CMOS (VDD / 2) version
MAX15013_, TTL version
MIN TYP MAX UNITS
8.0
12.6
V
70
140
µA
3
mA
15
40
µA
3
mA
6.5
7.3
8.0
V
6.0
6.9
7.8
V
0.5
V
0.67 x 0.55 x
VDD
VDD
V
2
1.65
0.4 x 0.33 x
VDD
VDD
V
1.4
0.8
1.6
V
0.25
2 _______________________________________________________________________________________
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