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MAX1446-07 Datasheet, PDF (3/22 Pages) Maxim Integrated Products – 10-Bit, 60Msps, 3.0V, Low-Power ADC with Internal Reference
10-Bit, 60Msps, 3.0V, Low-Power
ADC with Internal Reference
ELECTRICAL CHARACTERISTICS (continued)
(VDD = 3.0V, OVDD = 2.7V; 0.1µF and 1.0µF capacitors from REFP, REFN, and COM to GND; VREFIN = 2.048V, REFOUT connected
to REFIN through a 10kΩ resistor, VIN = 2VP-P (differential with respect to COM), CL ≈ 10pF at digital outputs, fCLK = 62.5MHz
(50% duty cycle), TA = TMIN to TMAX, unless otherwise noted. ≥+25°C guaranteed by production test, <+25°C guaranteed by design
and characterization. Typical values are at TA = +25°C.)
PARAMETER
Third-Harmonic Distortion
Two-Tone Intermodulation
Distortion
Third-Order Intermodulation
Distortion
Total Harmonic Distortion
(First 5 Harmonics)
Small-Signal Bandwidth
Full-Power Bandwidth
Aperture Delay
Aperture Jitter
Overdrive Recovery Time
Differential Gain
Differential Phase
Output Noise
INTERNAL REFERENCE
SYMBOL
HD3
IMDTT
IM3
THD
FPBW
tAD
tAJ
CONDITIONS
fIN = 7.492MHz
fIN = 19.943MHz
fIN = 39.9MHz (Note 1)
f1 = 19MHz at -6.5dBFS,
f2 = 21MHz at -6.5dBFS (Note 2)
f1 = 19MHz at -6.5dBFS
f2 = 21MHz at -6.5dBFS (Note 2)
fIN = 7.492MHz
fIN = 19.943MHz
fIN = 39.9MHz (Note 1)
Input at -20dBFS, differential inputs
Input at -0.5dBFS, differential inputs
For 1.5 × full-scale input
IN+ = IN- = COM
Reference Output Voltage
REFOUT
Reference Temperature
Coefficient
Load Regulation
TCREF
BUFFERED EXTERNAL REFERENCE (VREFIN = 2.048V)
REFIN Input Voltage
VREFIN
Positive Reference Output Voltage VREFP
Negative Reference Output
V ol tag e
VREFN
Common-Mode Level
VCOM
Differential Reference Output
Voltage Range
ΔVREF ΔVREF = VREFP - VREFN, TA ≥ +25°C
REFIN Resistance
RREFIN
Maximum REFP, COM Source
Current
ISOURCE
MIN TYP MAX UNITS
-74
-73
dBc
-71
-75
dBc
-75
-70
-70
-69
500
400
1
2
2
±1
±0.25
0.2
dBc
-64
-63
dBc
MHz
MHz
ns
psrms
ns
%
°
LSBrms
2.048
±1%
60
1.25
V
ppm/°C
mV/mA
2.048
2.012
V
0.988
V
VDD / 2
V
0.98 1.024 1.07
V
>50
MΩ
5
mA
Maximum REFP, COM Sink
Current
ISINK
-250
µA
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