MAX1510 Datasheet, PDF (2/13 Pages) Maxim Integrated Products – Low-Voltage DDR Linear Regulator

Low-Voltage DDR Linear Regulator
ABSOLUTE MAXIMUM RATINGS
IN to PGND...............................................................-0.3V to +4V
OUT to PGND ..............................................-0.3V to (V_IN + 0.3V)
OUTS to AGND ............................................-0.3V to (V_IN + 0.3V)
V_CC to AGND............................................................-0.3V to +4V
REFIN, REFOUT, SHDN, PGOOD to AGND ..-0.3V to (V_CC + 0.3V)
PGND to AGND .....................................................-0.3V to +0.3V
REFOUT Short Circuit to AGND .................................Continuous
OUT Continuous RMS Current: 100s ..................................±1.6A
1s ......................................±2.5A
Continuous Power Dissipation (T_A = +70°C)
10-Pin 3mm x 3mm Thin DFN
(derated 24.4mW/°C above +70°C)...........................1951mW
Operating Temperature Range
MAX1510ETB...................................................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V_IN = 1.8V, V_CC = 3.3V, V_REFIN = V_OUTS = 1.25V, SHDN = V_CC, circuit of Figure 1, T_A = -40°C to +85°C, unless otherwise noted.
Typical values are at T_A= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Input Voltage Range
Quiescent Supply Current (V_CC)
Shutdown Supply Current (V_CC)
V_IN
V_CC
I_CC
I_CC(SHDN)
Power input
Bias supply
Load = 0, V_REFIN > 0.45V
SHDN = GND, V_REFIN > 0.45V
SHDN = GND, REFIN = GND
1.1
3.6
V
2.7
3.6
0.7
1.3
mA
350
600
µA
50
100
µA
Quiescent Supply Current (V_IN)
I_IN
Load = 0
0.4
10
mA
Shutdown Supply Current (V_IN) I_IN(SHDN) SHDN = GND
0.1
10
µA
Feedback-Voltage Error
V_OUTS
REFIN to OUTS
I_OUT = ±200mA
T_A = 25°C
-4
T_A = -40°C to +85°C -6
0
+4
mV
+6
Load-Regulation Error
-1A ≤ I_OUT ≤ +1A
-15
+15
mV
Line-Regulation Error
1.4V ≤ V_IN ≤ 3.3V, I_OUT = ±100mA
1
mV
OUTS Input Bias Current
I_OUTS
-1
+1
µA
OUTPUT
Output Adjust Range
0.5
1.5
V
OUT On-Resistance
Output Current Slew Rate
High-side MOSFET (source) (I_OUT = 0.1A)
Low-side MOSFET (sink) (I_OUT = -0.1A)
C_OUT = 100µF, I_OUT = 0.1A to 2A
0.10 0.25
Ω
0.10 0.25
3
A/µs
OUT Power-Supply Rejection
Ratio
PSRR
10Hz < f < 10kHz, I_OUT = 200mA,
C_OUT = 100µF
80
dB
OUT to OUTS Resistance
R_OUTS
12
kΩ
Discharge MOSFET On-
Resistance
R_DISCHARGE SHDN = GND
8
Ω
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