MAX15058 Datasheet, PDF (2/21 Pages) Maxim Integrated Products – High-Efficiency, 3A, Current-Mode Synchronous, Step-Down Switching Regulator

High-Efficiency, 3A, Current-Mode
Synchronous, Step-Down Switching Regulator
ABSOLUTE MAXIMUM RATINGS
IN, PGOOD to GND.................................................-0.3V to +6V
LX to GND...................................................-0.3V to (V_IN + 0.3V)
LX to GND........................................-1V to (V_IN + 0.3V) for 50ns
EN, COMP, FB, SS/REFIN, SKIP to GND...-0.3V to (V_IN + 0.3V)
LX Current (Note 1).................................................... -6A to +6A
Output Short-Circuit Duration....................................Continuous
Continuous Power Dissipation (T_A = +70NC)
9-Bump WLP Multilayer Board
(derate 14.1mW/NC above T_A = +70NC)....................1127mW
Junction-to-Case Thermal Resistance (B_JC) (Note 2).....26NC/W
Junction-to-Ambient Thermal
Resistance (B_JA) (Note 2)...........................................71NC/W
Operating Temperature Range........................... -40NC to +85NC
Storage Temperature Range............................ -65NC to +150NC
Soldering Temperature (reflow).......................................+260NC
Note 1: LX has internal clamp diodes to GND and IN. Applications that forward bias these diodes should not exceed the IC’s pack-
age power dissipation limits.
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(VIN = 5V, TA = -40NC to +85NC, unless otherwise noted. Typical values are at TA = +25NC.) (Note 3)
PARAMETER
IN Voltage Range
IN Shutdown Supply Current
IN Supply Current
V_IN Undervoltage Lockout
Threshold
VIN Undervoltage Lockout
Hysteresis
ERROR AMPLIFIER
Transconductance
Voltage Gain
FB Set-Point Accuracy
FB Input Bias Current
COMP to Current-Sense
Transconductance
COMP Clamp Low
POWER SWITCHES
LX On-Resistance, High-Side
pMOS
LX On-Resistance, Low-Side
nMOS
High-Side Switch Current-Limit
Threshold
Low-Side Switch Sink Current-
Limit Threshold
Low-Side Switch Source Current-
Limit Threshold
SYMBOL
VIN
IIN
gMV
AVEA
VFB
IFB
g_MC
IHSCL
CONDITIONS
VEN = 0V
VEN = 5V, VFB = 0.65V, no switching
LX starts switching, V_IN rising
LX stops switching, V_IN falling
Over line, load, and temperature
VFB = 0.6V
V_FB = 0.65V, V_SS = 0.6V
MIN TYP MAX UNITS
2.7
5.5
V
0.2
2
FA
1.56 2.3
mA
2.6
2.7
V
200
mV
1.5
mS
90
dB
594 600 606
mV
-500
+500
nA
18
A/V
0.94
V
30
mI
18
mI
5
A
4
A
5
A
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