DS1265Y Datasheet, PDF (2/8 Pages) Maxim Integrated Products – 8M Nonvolatile SRAM

DS1265Y/AB
READ MODE
The DS1265 devices execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip
Enable) and OE (Output Enable) are active (low). The unique address specified by the 20 address inputs
(A₀ - A₁₉) defines which of the 1,048,576 bytes of data is accessed. Valid data will be available to the
eight data output drivers within t_ACC (Access Time) after the last address input signal is stable, providing
that CE and OE (Output Enable) access times are also satisfied. If OE and CE access times are not
satisfied, then data access must be measured from the later-occurring signal ( CE or OE ) and the limiting
parameter is either t_CO for CE or t_OE for OE rather than t_ACC.
WRITE MODE
The DS1265 devices execute a write cycle whenever WE and CE signals are active (low) after address
inputs are stable. The later-occurring falling edge of CE or WE will determine the start of the write cycle.
The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept
valid throughout the write cycle. WE must return to the high state for a minimum recovery time (t_WR)
before another cycle can be initiated. The OE control signal should be kept inactive (high) during write
cycles to avoid bus contention. However, if the output drivers are enabled ( CE and OE active) then WE
will disable the outputs in t_ODW from its falling edge.
DATA RETENTION MODE
The DS1265AB provides full functional capability for V_CC greater than 4.75 volts and write protects by
4.5 volts. The DS1265Y provides full functional capability for V_CC greater than 4.5 volts and write
protects by 4.25 volts. Data is maintained in the absence of V_CC without any additional support circuitry.
The nonvolatile static RAMs constantly monitor V_CC. Should the supply voltage decay, the NV SRAMs
automatically write protect themselves, all inputs become don’t care, and all outputs become high-
impedance. As V_CC falls below approximately 3.0 volts, a power switching circuit connects the lithium
energy source to RAM to retain data. During power-up, when V_CC rises above approximately 3.0 volts,
the power switching circuit connects external V_CC to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after V_CC exceeds 4.75 volts for the DS1265AB and 4.5 volts for the
DS1265Y.
FRESHNESS SEAL
Each DS1265 device is shipped from Dallas Semiconductor with its lithium energy source disconnected,
guaranteeing full energy capacity. When V_CC is first applied at a level greater than V_TP, the lithium
energy source is enabled for battery backup operation.
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