DS1265Y Datasheet, PDF (1/8 Pages) Maxim Integrated Products – 8M Nonvolatile SRAM

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DS1265Y/AB
8M Nonvolatile SRAM
FEATURES
§ 10 years minimum data retention in the
absence of external power
§ Data is automatically protected during power
loss
§ Unlimited write cycles
§ Low-power CMOS operation
§ Read and write access times as fast as 70 ns
§ Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
§ Full ±10% V_CC operating range (DS1265Y)
§ Optional ±5% V_CC operating range
(DS1265AB)
§ Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
NC 1
NC 2
A18 3
A16 4
A14 5
A12 6
A7 7
A6 8
A5 9
A4 10
A3 11
A2 ¹²
A1 ¹³
A0 14
DQ0 15
DQ1 16
DQ2 ¹⁷
GND 18
36
VCC
35
A19
34
NC
33
A15
32
A17
31
WE
30
A13
29
A8
28
A9
27
A11
26
OE
25
A10
24
CE
23
DQ7
22
DQ6
21
DQ5
20
DQ4
19
DQ3
36-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
PIN DESCRIPTION
A0 - A19
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
V_CC
GND
- Power (+5V)
- Ground
NC
- No Connect
DESCRIPTION
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as
1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors V_CC for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
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