DG202_06 Datasheet, PDF (2/12 Pages) Maxim Integrated Products – Quad SPST CMOS Analog Switches

Quad SPST CMOS Analog Switches
ABSOLUTE MAXIMUM RATINGS (DG212)
V+ to V-………………………………….............……………….44V
V_IN to Ground…………………………..................…. ……...V-, V+
V_L to Ground………....................……………………….-0.3V, 25V
V_S or V_D to V+……...........................………………………0, -40V
V_S or V_D to V-……………........................…………………..0, 40V
V+ to Ground…………………...................................………...25V
V- to Ground…………………………………….................…...-25V
Current, Any Terminal Except S or D……….............……...30mA
Continuous Current, S or D……………………..............…...20mA
Peak Current, S or D
(pulsed at 1ms 10% duty cycle max)…..........................70mA
Storage Temperature Range……………..……..-65°C to +125°C
Note 1: Device mounted with all leads soldered to PC board.
Operating Temperature Range
DG212C ................................……………...……...0°C to +70°C
DG212D/E .........................……………...……...-40°C to +85°C
Power Dissipation (T_A = +70°C) (Note 1)
16-Pin Plastic Dip (derate 10.5mW/°C above +70°C) ..842mW
16-Pin Narrow SO (derate 8.7mW/°C above+70°C). ....696mW
16-Pin TSSOP (derate 9.4mW/°C above +70°C) ..........755mW
16-Pin QFN (5mm x 5mm)
(derate 19.2mW/°C above +70°C) .........................1538mW
16-Pin Thin QFN
(derate 14.7mW/°C above +70°C) .........................1177mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS (DG212)
(V+ = +15V, V- = -15V, GND = 0, T_A = +25°C, unless otherwise noted.) (For more information on TYP values see Note 2.)
PARAMETER
SWITCH
Analog Signal Range
Drain-Source ON-Resistance
Source OFF-Leakage Current
Drain OFF-Leakage Current
Drain ON-Leakage Current
(Note 3)
INPUT
Input Current with Input Voltage
High
Input Current with Input Voltage
Low
SYMBOL
CONDITIONS
V_ANALOG
R_{DS (ON)}
I_{S (OFF)}
I_{D (OFF)}
I_{D (ON)}
V_D = ±10V, V_IN = 2.4V, I_S = 1mA
V_IN = 0.8V
V_S = 14V, V_D = -14V
V_S = -14V, V_D = 14V
V_IN = 0.8V
V_S = 14V, V_D = -14V
V_S = -14V, V_D = 14V
V_S = V_D = 14V, V_IN = 2.4V
V_S = V_D = -14V, V_IN = 2.4V
I_INH
V_IN = 2.4V
V_IN = 15V
I_INL
V_IN = 0
MIN
TYP
MAX
-15
+15
115
175
0.01
5.0
-5.0
-0.02
0.01
5.0
-5.0
-0.02
0.1
5.0
-5.0
-0.15
-1.0 -0.0004
0.003
1.0
-1.0 -0.0004
DYNAMIC
Turn-ON Time
Turn-OFF Time
Source OFF-Capacitance
Drain OFF-Capacitance
Channel ON-Capacitance
OFF-Isolation (Note 4)
Crosstalk
(Channel to Channel)
t_ON
t_OFF1
t_OFF2
C_{S (OFF)}
C_{D (OFF)}
C_{D + S (ON)}
OIRR
CCRR
See Switching Time Test Circuit
V_S = 2V, R_L = 1kΩ, C_L = 35pF
V_S = 0, V_IN = 0, f = 1MHz
V_D = 0, V_IN = 0, f = 1MHz
V_D = V_S = 0, V_IN = 5V, f = 1MHz
V_IN = 0, R_L = 1kΩ, C_L = 15pF,
V_S = 1VRMS, f = 100kHz
460
1000
360
500
450
5
5
16
70
90
UNITS
V
Ω
nA
µA
ns
pF
dB
2 _______________________________________________________________________________________