TLBE1100B Datasheet, PDF (3/10 Pages) Toshiba Semiconductor – Panel Circuit Indicator

TLBE1100B
100
Ta = 25°C
50
30
I_F – V_F
(typ.)
10
5
3
1
2.4
2.6
3.0
3.4
3.8
4.2
4.6
Forward voltage V_F (V)
I_V – Tc
(typ.)
10
5
3
1
0.5
0.3
0.1
−20
0
20
40
60
80
100
Case temperature Tc (°C)
TL(BE,GTE,EGE)1100B(T11)
300
Ta = 25°C
100
50
30
I_V – I_F
(typ.)
10
5
3
1
35
10
30 50 100
Forward current I_F (mA)
Relative Iv - λ
(typ.)
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
360
400
440
480
520
560
600
Wavelength λ (nm)
Radiation pattern
Ta = 25°C
(typ.)
20° ^{10° 0° 10°} _20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
90°
0 0.2 0.4 0.6 0.8 1.0
3
2006-06-01