TLBE1100B Datasheet, PDF (2/10 Pages) Toshiba Semiconductor – Panel Circuit Indicator

TL(BE,GTE,EGE)1100B(T11)
Electrical Characteristics (Ta = 25°C)
Product Name
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
Forward Voltage V_F
Min Typ. Max
I_F
2.8
3.2
4.3
3.0
3.3
4.5
20
2.9
3.4
4.4
V
mA
Reverse Current
I_R
Max
V_R
10
4
µA
V
Optical Characteristics–1 (Ta = 25°C)
Product Name
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
Luminous Intensity I_V
Min Typ. Max
I_F
63
100 320
20
160 300 800
20
100 350 800
20
mcd mcd mcd mA
Available Iv rank
Please see Note 2
QA / RA / SA
SA / TA / UA
RA / SA / TA / UA
Note 2: The specification as following table is used for Iv classification of LEDs in Toshiba facility.
Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned.
Iv rank
Rank symbol
Min
Max
QA
63
125
RA
100
200
SA
160
320
TA
250
500
UA
400
800
Unit
mcd
mcd
Optical Characteristics–2 (Ta = 25°C)
Product Name
TLBE1100B
TLGTE1100B
TLEGE1100B
Unit
Emission Spectrum
Peak Emission
Wavelength λ_p
∆λ Dominant Wavelength λ_d
I_F
Min Typ. Max Typ. Min Typ. Max
⎯
468
⎯
⎯
496
⎯
25
463 470 477
30
496 505 514
20
⎯
523
⎯
35
518 528 537
nm
nm
nm
mA
Note 3: Caution
ESD withstand voltage according to MIL STD 883D, Method 3015.7 : ≥1000V
When handling this LED, take the following measures to prevent the LED from being damaged or otherwise
adversely affected.
1) Use a conductive tablemat and conductive floor mat, and ground the workbench and floor.
2) Operators handling laser diodes must be grounded via a high resistance (about 1MΩ). A conductive strap is
good for this purpose.
3) Ground all tools including soldering irons.
2
2006-06-01