MRF158 Datasheet, PDF (5/16 Pages) Motorola, Inc – TMOS BROADBAND RF POWER FET

TYPICAL CHARACTERISTICS
10
1
5
Coss
2
Ciss
1
0.1
0.5
Crss
0.2
VGS = 0 V
f = 1 MHz
0.1 ₀
0.01
5
10
15
20
25
1
VDS,DRAIN–SOURCE VOLTAGE (VOLTS)
10
100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain–Source Voltage
Figure 4. DC Safe Operating Area
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
f = 500 MHz
0.6
VDS = 28 V
0.4
IDQ = 25 mA
0.2
0
0 10 20 30 40 50 60 70 80 90 100
Pin, INPUT POWER (mW)
Figure 5. Output Power versus Input Power
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
12
55 mW
Pin = 80 mW
30 mW
f = 500 MHz
IDQ = 25 mA
14 16 18 20 22 24 26 28
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. Output Power versus Voltage
REV 9
5