MRF158 Datasheet, PDF (1/16 Pages) Motorola, Inc – TMOS BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF TMOS^ Line
Power Field Effect Transistor
N–Channel Enhancement Mode
Designed for wideband large–signal amplifier and oscillator applications to
500 MHz.
• Guaranteed 28 Volt, 500 MHz Performance
Output Power = 2.0 Watts
Minimum Gain = 16 dB (Min)
Efficiency = 55% (Typ)
• Facilitates Manual Gain Control, ALC and Modulation
Techniques
• 100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
• Excellent Thermal Stability, Ideally Suited for Class A
Operation
Order this document
by MRF158/D
MRF158
To 500 MHz, 2 W, 28 V
TMOS
BROADBAND
RF POWER FET
D
G
S
CASE 305A–01, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Value
65
65
±20
0.5
8.0
45
– 65 to +150
200
Max
13.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
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