MRF150 Datasheet, PDF (4/8 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

150 _{f = 175 MHz}
90
136
30
Z_in
15
30 ⁹⁰ _{f = 175 MHz}
15
7.5
7.5
4.0 ^ZOL^*
Z_o = 10 Ω
2.0
4.0
V_DD = 50 V
I_DQ = 250 mA
P_out = 150 W PEP
Z_OL* = Conjugate of the optimum load impedance
2.0
Z_OL* = into which the device output operates at a
Z_OL* = given output power, voltage and frequency.
NOTE: Gate Shunted by 25 Ohms.
Figure 7. Series Equivalent Impedance
BIAS
0 – 12 V
RF INPUT
R1
C1
C2
+
C4
C5
R3
L1
C3 ^R2
RFC2
+ 50 Vdc
C10
+ _C11
L4
DUT
L3
C6
L2
C7
C9
RF OUTPUT
C8
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 25 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 60 WV Electrolytic
L1 — 3/4″, 18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 1″, #16 AWG into Hairpin
L4 — 2 Turns #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Choke
RFC2 — VK200–4B
R1 — 150 Ω, 1.0 W Carbon
R2 — 10 kΩ, 1/2 W Carbon
R3 — 120 Ω, 1/2 W Carbon
Figure 8. 150 MHz Test Circuit (Class AB)
REV 9
4