MRF150 Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz
frequency range.
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
• Superior High Order IMD
• IMD_(d3) (150 W PEP) — – 32 dB (Typ)
• IMD_(d11) (150 W PEP) — – 60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
Order this document
by MRF150/D
MRF150
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
G
CASE 211–11, STYLE 2
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_DGO
V_GS
I_D
P_D
T_stg
T_J
Symbol
R_θJC
Value
125
125
± 40
16
300
1.71
– 65 to +150
200
Max
0.6
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
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