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MRF140 Datasheet, PDF (4/8 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET | |||
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150
Zin
50
150
30
30
7.0
ZOL*
f = 2.0 MHz
Zo = 10 Ohms
7.0
VDD = 28 V
IDQ = 250 mA
Pout = 150 W PEP
f = 2.0 MHz
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
NOTE: Gate Shunted by 25 Ohms.
Figure 7. Series Equivalent Impedance
BIAS
0Ä-Ä12 V
RF INPUT
R1
C4
C1
+
C5
L1
DUT
RFC1
C2
C3
R2
D1
RFC1
+ 28 V
L4
C10
+
- C11
L3
C6
L2
C7
C9
RF
OUTPUT
C8
REV 9
4
C1, C2, C8 â Arco 463 or equivalent
C3 â 25 pF, Unelco
C4 â 0.1 µF, Ceramic
C5 â 1.0 µF, 15 WV Tantalum
C6 â 15 pF, Unelco J101
C7 â 25 pF, Unelco J101
C9 â Arco 262 or equivalent
C10 â 0.05 µF, Ceramic
C11 â 15 µF, 35 WV Electrolytic
L1 â 3/4â³, #18 AWG into Hairpin
L2 â Printed Line, 0.200â³ x 0.500â³
L3 â 7/8â³, #16 AWG into Hairpin
L4 â 2 Turns, #16 AWG, 5/16 ID
RFC1 â 5.6 µH, Molded Choke
RFC2 â VK200â4B
R1, R2 â 150 â¦, 1.0 W Carbon
Figure 8. 150 MHz Test Circuit (Class AB)
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