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MRF140 Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET | |||
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
NâChannel EnhancementâMode
Designed primarily for linear largeâsignal output stages up to 150 MHz
frequency range.
⢠Specified 28 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 15 dB (Typ)
Efficiency = 40% (Typ)
⢠Superior High Order IMD
⢠IMD(d3) (150 W PEP) â â30 dB (Typ)
⢠IMD(d11) (150 W PEP) â â60 dB (Typ)
⢠100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
Order this document
by MRF140/D
MRF140
150 W, to 150 MHz
NâCHANNEL MOS
LINEAR RF POWER
FET
CASE 211â11, STYLE 2
G
S
MAXIMUM RATINGS
Rating
DrainâSource Voltage
DrainâGate Voltage
GateâSource Voltage
Drain Current â Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
65
65
±40
16
300
1.7
â65 to +150
200
Max
0.6
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE â CAUTION â MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
1
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