MRF137 Datasheet, PDF (4/9 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

50
40
P_in = 8 W
30
5W
20
2W
10
I_DQ = 25 mA
f = 400 MHz
0
12
16
20
24
28
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
30
V_DD = 28 V
25 _{IDQ = 25 mA}
P_in = CONSTANT
20
TYPICAL DEVICE SHOWN,
15 ^VGS(th) ^{= 3 V}
10
400 MHz
150 MHz
5
0
-ā9 -ā8
-ā6
-ā4
-ā2
0 123
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 9. Output Power versus Gate Voltage
3
TYPICAL DEVICE SHOWN,
V_GS(th) = 3 V
2
V_DS = 10 V
1
0
1
2
3
4
5
6
7
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 10. Drain Current versus Gate Voltage
(Transfer Characteristics)
1.02
I_D = 1.25 A
1A
1
750 mA
0.98
0.96
0.94
V_DS = 28 V
25 mA
500 mA
200 mA
0.92
-25
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE (°C)
Figure 11. Gate Source Voltage versus
Case Temperature
200
180
160
140
120
100
80
60
40
20
00
10
V_GS = 0 V
5
f = 1 MHz
2
C_oss
1
C_iss
0.5
C_rss
4
8
12
16
20
24
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 12. Capacitance versus
Drain–Source Voltage
0.1
28
1
T_C = 25°C
2
5
10
20
60 100
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 13. DC Safe Operating Area
REV 6
4