MRF137 Datasheet, PDF (1/9 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FET

SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
. . . designed for wideband large–signal output and driver stages up to
400 MHz range.
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 30 Watts
Minimum Gain = 13 dB
Efficiency — 60% (Typical)
• Small–Signal and Large–Signal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 30 W
Output = 7.7 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
• Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A
Operation
• Facilitates Manual Gain Control, ALC and Modulation
D
Techniques
Order this document
by MRF137/D
MRF137
30 W, to 400 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
MAXIMUM RATINGS
G
CASE 211–07, STYLE 2
S
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
(R_GS = 1.0 MΩ)
V_DSS
65
Vdc
V_DGR
65
Vdc
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_GS
±40
Vdc
I_D
5.0
Adc
P_D
100
Watts
0.571
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
T_stg
–65 to +150
°C
T_J
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
1.75
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
1
MRF137