MRF422 Datasheet, PDF (3/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

280
25
V_CC = 28 V
240 _{ICQ = 150 mA}
TWO TONE TEST:
20
200 _{f = 30, 30.001 MHz}
160
15
120
10
80
V_CC = 28 V
40
5
I_CQ = 150 mA
P_out = 150 W PEP
0
0
2
4
6
8
10
12
14
P_in, INPUT POWER (WATTS PEP)
Figure 2. Output Power versus Input Power
0
1.5 2
3
5 7 10
15 20 30
f, FREQUENCY (MHz)
Figure 3. Power Gain versus Frequency
280
IMD = 30 dB
240
I_CQ = 25 mA
f = 30, 30.001 MHz
200
-10
V_CC = 28 V
I_CQ = 150 mA
-ā20 ^{f = 30, 30.001 MHz}
160
-ā30
120
3RD ORDER
80
-ā40
5TH ORDER
40
0
16
20
-ā50
24
28
32
0
40
80
120
160
200
V_CC, SUPPLY VOLTAGE (VOLTS)
P_out, OUTPUT POWER (WATTS PEP)
Figure 4. Linear Output Power versus
Supply Voltage
Figure 5. Intermodulation Distortion
versus Output Power
40
20
T_C = 25°C
8
4
2
0.8
0.4
1
2
5
10
20
50
100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. DC Safe Operating Area
30
15
7
f = 2 MHz
ĂV_CC Ă= 28 V
ĂI_CQ Ă= 150 mA
P_out = 150 W PEP
FREQUENCY
MHz
Z_in
Ohms
2
4.90 - j1.54
7
2.10 - j0.93
15
1.32 - j0.38
30
0.81 - j0.26
Figure 7. Series Input Impedance
REV 6
3