MRF422 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON

SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz.
• Specified 28 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
• Intermodulation Distortion @ 150 W (PEP) —
IMD = –30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Order this document
by MRF422/D
MRF422
150 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstanding Current — 10 s
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I_C = 200 mAdc, I_B = 0)
Collector–Emitter Breakdown Voltage (I_C = 100 mAdc, V_BE = 0)
Collector–Base Breakdown Voltage (I_C = 100 mAdc, I_E = 0)
Emitter–Base Breakdown Voltage (I_E = 10 mAdc, I_C = 0)
Collector Cutoff Current (V_CE = 28 Vdc, V_BE = 0, T_C = 25°C)
V_(BR)CEO
V_(BR)CES
V_(BR)CBO
V_(BR)EBO
I_CES
Symbol
V_CEO
V_CBO
V_EBO
I_C
—
P_D
T_stg
Symbol
R_θJC
Min
35
85
85
3.0
—
REV 6
1
CASE 211–11, STYLE 1
Value
40
85
3.0
20
30
290
1.66
–65 to +150
Max
0.6
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
20
mAdc
(continued)