MRF392 Datasheet, PDF (3/4 Pages) Motorola, Inc – BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

160
f = 100 MHz
225 MHz
140
400 MHz
120
500 MHz
100
80
60
40
VCC = 28 V
20
0
0
5
10
15
20
25
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
80
70 ^{f = 100 MHz}
60
225 MHz
400 MHz
50
40
30
20
VCC = 13.5 V
10
0
0 2 4 6 8 10 12 14 16 18 20
Pin, INPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
160
Pin = 10 W
140
120
7W
100
5W
80
60
40
20
f = 225 MHz
0
10 12 14 16 18 20 22 24 26 28 30
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
160
Pin = 14 W
140
120
10 W
100
7W
80
60
40
20
f = 400 MHz
0
10 12 14 16 18 20 22 24 26 28 30
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
REV 8
3
Zin & ZOL* are given
from base–to–base and
collector–to–collector respectively.
f = 100 MHz ₂₂₅
500
CAPACITIVE
REACTANCE
COMPONENT (–jX)
400
ZOL*
225
f = 100 MHz
500 _Zin
450 ₄₅₀
INDUCTIVE
REACTANCE
COMPONENT (+jX)
400
VCC = 28 V, Pout = 125 W
f
Zin
MHz
OHMS
ZOL*
OHMS
Zo = 20 Ω
100
0.72 + j0.44
9.0 – j6.0
225
0.72 + j2.62
5.2 – j1.8
400
3.88 + j5.72
3.6 + j0.53
450
3.84 + j2.8
3.2 + j1.2
500
1.26 + j3.01
3.0 + j2.0
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
Figure 6. Series Equivalent Input/Output Impedance