MRF173CQ Datasheet, PDF (3/6 Pages) Tyco Electronics – N-CHANNEL BROADBAND RF POWER MOSFET

TYPICAL CHARACTERISTICS
120
f = 100 MHz
100
150 MHz
80
200 MHz
60
40
V_DD = 28 V
20
I_DQ = 50 mA
00
1
2
3
4
5
6
7
8
9 10
P_in, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
80
70
f = 100 MHz
60
50
150 MHz
40
30
200 MHz
20
10
V_DD = 13.5 V
I_DQ = 50 mA
00
2.0
4.0
6.0
8.0
10
12
14
P_in, INPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
140
120 IDQ = 50 mA
f = 100 MHz
100
80
60
40
P_in = 4.0 W
3.0 W
2.0 W
1.0 W
20
010 _{12 14 16 18 20 22 24 26 28 30}
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
140
120 ^IDQ ^{= 50 mA}
f = 150 MHz
100
80
60
40
P_in = 8.0 W
6.0 W
4.0 W
2.0 W
20
010 _{12 14 16 18 20 22 24 26 28 30}
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
140
120 I_DQ = 50 mA
f = 200 MHz
100
80
P_in = 14 W
10 W
60
6.0 W
4.0 W
40
20
010 _{12 14 16 18 20 22 24 26 28 30}
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
22
20
18
P_out = 80 W
V_DD = 28 V
16
I_DQ = 50 mA
14
12
10
8.0
6.0
4.0
2.0
20 40 60 80 100 120 140 160 180 200 220
f, FREQUENCY (MHz)
Figure 7. Power Gain versus Frequency
REV 0
3