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MRF173CQ Datasheet, PDF (1/6 Pages) Tyco Electronics – N-CHANNEL BROADBAND RF POWER MOSFET
SEMICONDUCTOR TECHNICAL DATA
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by MRF173CQ/D
The RF MOSFET Line
RF Power
Field Effect Transistor
N–Channel Enhancement Mode MOSFET
MRF173CQ
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
this device makes possible solid state transmitters for FM broadcast or TV
channel frequency bands.
• Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
• Low Thermal Resistance
D
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
• Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
• Excellent Thermal Stability; Suited for Class A Operation G
S
MAXIMUM RATINGS
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGO
VGS
ID
PD
65
Vdc
65
Vdc
±40
Vdc
9.0
Adc
220
Watts
1.26
W/°C
Storage Temperature Range
Operating Temperature Range
THERMAL CHARACTERISTICS
Tstg
–65 to +150
°C
TJ
200
°C
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
CASE 316–01, STYLE 2
Symbol
RθJC
Max
0.8
Min
Typ
Max
Unit
°C/W
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA
V(BR)DSS
65
—
—
V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V)
IDSS
—
—
2.0
mA
Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V)
IGSS
—
—
1.0
µA
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA)
Drain–Source On–Voltage (VDS(on), VGS = 10 V, ID = 3.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.0 A)
VGS(th)
1.0
3.0
6.0
V
VDS(on)
—
—
1.4
V
gfs
1.8
2.2
—
mhos
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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