MRF166W Datasheet, PDF (3/10 Pages) Motorola, Inc – TMOS BROADBAND RF POWER FET

BIAS SUPPLY
R1
RF INPUT ^B1
C2
C11 ^R2
R3
C3
C4
C1
R4
C9
+
C12
C13
C14
–
L1
D.U.T.
C5
C7
C6
VDD = 28 Vdc
B2
RF OUTPUT
C8
L2
Inputs Line
70 mils x 2460 mils
C10
Output Lines
70 mils x 2380 mils
C4
C3
490 mils
C5
680 mils
C6
C1, C2, C7, C8
220 pF, 100 mil Chip Capacitor, ATC
C3, C6
0 – 10 pF, Johanson
C4
27 pF, 100 mil Chip Capacitor, ATC
C5
22 pF, 100 mil Chip Capacitor, ATC
C9, C10, C11, C12 0.01 µF Blue Capacitor
C13
470 pF, 100 mil Chip Capacitor, ATC
C14
m 50 F, 50 V Electrolytic Capacitor
L1, L2
B1, B2
R1
R2
R3, R4
8 Turns #20 AWG, 0.100 mils ID
W 6″ long, ID = 550 mils, 50 Semi–Rigid Coax
W 1.0 k 1/2 Watt
W 10 k 1/2 Watt
W 45 1/2 Watt
Board Material – Teflon^® Fiberglass
Dielectric Thickness = 0.30″, ε_r = 2.55 Copper Clad, 2.0 oz. Copper
Figure 1. MRF166W 500 MHz Test Circuit Schematic
REV 3
3