MRF166W Datasheet, PDF (2/10 Pages) Motorola, Inc – TMOS BROADBAND RF POWER FET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 5.0 mA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS= 10 Vdc, ID = 25 mA)
VGS(th)
Forward Transconductance
gfs
(VDS= 10 Vdc, ID = 1.5 A)
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
Ciss
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Output Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Coss
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Crss
FUNCTIONAL CHARACTERISTICS (2)
Common Source Power Gain
Gps
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
Drain Efficiency
η
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
Electrical Ruggedness
Ψ
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
Load VSWR = 30:1, All phase angles at frequency of test
Series Equivalent Input Impedance
Zin
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
Series Equivalent Output Impedance
(VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA)
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in a push–pull amplifier.
Zout
Min
Typ
Max
Unit
Vdc
65
—
—
mA
—
—
0.5
µA
—
—
1.0
Vdc
1.5
3.0
4.5
0.9
1.1
mS
—
pF
—
28
—
pF
—
30
—
pF
—
4.0
—
dB
14
16
—
%
50
55
—
No Degradation in Output Power
—
2.88 –j7.96
—
—
6.12 –j9.43
—
Ohms
Ohms
REV 3
2