MRF166C Datasheet, PDF (3/9 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FETs

BIAS ^R3
R2 C4
Z1
RF
INPUT _Z3
C2
C1
R1
C3
C8
RFC2
DUT
RFC1
C9
C10
+
C11
–
VDD = 28 V
+
Vdc
–
Z2
C5
RF
Z4 ^OUTPUT
C7
C6
C1, C7
C2, C6
C3
C4, C8
C5
C9, C10
C11
R1
R2
R3
RFC1
RFC2
Board Material
200 pF, Chip Capacitor
2–10 pF, Trimmer Capacitor, Johansen
27 pF, ATC 100 mil Chip Capacitor
0.1 µF, Chip Capacitor
15 pF, ATC 100 mil Chip Capacitor
680 pF, Feedthru Capacitor
50 µF, 50 V, Electrolytic Capacitor
120 Ω, 1/2 W Resistor
10 kΩ, 1/2 W Resistor
1 kΩ, 1/2 W Resistor
Ferroxcube VK200 19/4B
10 Turns AWG #18, 0.125″ I.D., Enameled
0.062″ Teflon^® Fiberglass
1 oz. Copper Clad Both Sides
ε_r = 2.56
Z1
0.120″ x 3.3″, Microstrip Line
350 mils
C2
600 mils
C3
Z2
0.120″ x 2.1″, Microstrip Line
C5
C6
825 mils
Z3, Z4
1650 mils
0.120″ x 0.25″, Microstrip Line
Figure 1. MRF166C 500 MHz Test Circuit
TYPICAL CHARACTERISTICS
100
10
50
Coss
20
Ciss
10
1
5
Crss
VGS = 0 V
2
f = 1 MHz
1
0.1
0
5
10
15
20
25
0
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain–Source Voltage
TC = 25°C
10
100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. DC Safe Operating Area
REV 10
3