MRF166C Datasheet, PDF (1/9 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FETs

SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF166C/D
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500
MHz.
• MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc
Output Power = 20 W
Gain = 13.5 dB
Efficiency = 50%
• Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Low Crss — 4.0 pF @ VDS = 28 V
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
D
MRF166C
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
CASE 319–07, STYLE 3
G
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
S
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
Value
65
65
± 20
4.0
70
0.4
– 65 to 150
200
Max
2.5
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 10
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