MRF16030 Datasheet, PDF (3/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

L3
B1
28 Vdc
R1
C1
C2
C3
C4
L2
L1
C5
Board Material – Teflon^® Glass Laminate Dielectric
Thickness = 0.30″, ε_r = 2.55″, 2.0 oz. Copper
B1
C1, C5
C2
C3
Fair Rite Bead on #24 Wire
100 pF, B Case, ATC Chip Cap
0.1 µF, Dipped Mica Cap
0.1 µF, Chip Cap
C4
L1, L2
L3
R1
47 µF, 50 V, Electrolytic
3 Turns, #18, 0.133″ ID, 0.15″ Long
9 Turns, #24 Enamel
82 Ω, 1.0 W, Carbon
Figure 1. MRF16030 Test Fixture Schematic
1.7 GHz
f = 1.5 GHz
1.6 GHz ^Zin
1.6 GHz
1.7 GHz
ZOL* ^{f = 1.5 GHz}
Zo = 10 Ω
f
MHz
1500
1600
1700
REV 3
3
VCC = 28 Vdc, Pout = 30 W
Zin
Ohms
3.05 + j 4.88
4.32 + j 6.00
5.62 + j 5.79
ZOL*
Ohms
2.66 + j 2.53
1.79 + j 2.80
1.51 + j 2.64
ZOL* = Conjugate of the optimum load impedance into which the device
output operates at a given output power, voltage and frequency.
Figure 2. Series Equivalent Input/Output Impedance