MRF16030 Datasheet, PDF (2/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
V(BR)CES
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0)
ICES
ON CHARACTERISTICS
DC Current Gain
hFE
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
Collector–Base Amplifier Power Gain
Gpe
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
Collector Efficiency
η
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
Input Return Loss
IRL
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz)
Output Mismatch Stress
Ψ
VCC = 28 Vdc, Pout = 30 Watts, f = 1600 MHz, Load
VSWR = 3:1, All phase angles at frequency of test
Min
Typ
Max
Unit
55
—
55
—
4.0
—
—
—
Vdc
—
Vdc
—
Vdc
—
mAdc
10
—
20
35
80
7.5
7.7
40
45
8.0
—
dB
—
%
—
dB
—
No Degradation in Output Power
REV 3
2