MRF154 Datasheet, PDF (3/7 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

25
800
600
VDD = 50 V
20
400
40 V
200
15
0
0
10
20
10
800
(IDQ = 800 mA)
VDD = 50 V
5
IDQ = 800 mA
Pout = 600 W
600
400
VDD = 50 V
200
40 V
0
0
2
5
10
20
50
100
200
0
50
100
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
100
10,000
TC = 25°C
5000
VGS = 0 V
f = 1 MHz
2000
Ciss
Coss
10
1000
500
200
Crss
1
100
2
20
200
1
2
5
10
20
50
100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
VDS, DRAIN VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
Figure 5. Capacitance versus Drain Voltage
40
30 ^{TYPICAL DEVICE SHOWN}
VDS = 10 V
VGS(th) = 3.5 V
gfs = 24 mhos
20
10
0
0
2
4
6
8
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Gate Voltage versus Drain Current
600
500
VDS = 30 V
400
15 V
300
200
100
0
0
20
40
60
ID, DRAIN CURRENT (AMPS)
Figure 7. Common Source Unity Gain Frequency
versus Drain Current
REV 2
3