MRF154 Datasheet, PDF (2/7 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
125
IDSS
—
IGSS
—
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
Drain–Source On–Voltage (VGS = 10 V, ID = 40 A)
Forward Transconductance (VDS = 10 V, ID = 20 A)
VDS(on)
1.0
gfs
16
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
—
Coss
—
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
Gps
—
Drain Efficiency
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
η
—
Intermodulation Distortion
(VDD = 50 V, Pout = 600 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA)
IMD(d3)
—
Typ
—
—
—
3.0
3.0
20
1600
950
175
17
45
– 25
Max
Unit
—
Vdc
20
mAdc
5.0
µAdc
5.0
Vdc
5.0
Vdc
—
mhos
—
pF
—
pF
—
pF
—
dB
—
%
—
dB
+
0–6V _–
R1
C5
C6
RF
INPUT
C1
DUT
R2
C4
C3
C2
L1
C7
L2
L3
+
C20 C21 ^{50 V}
–
C14 C15 C16
C17 C18 C19
C10 C11 C12
C13
C9
T1
RF
OUTPUT
C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47 µF, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1 µF
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — Two Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039 µF
C21 — 10 µF/100 V Electrolytic
L1 — 2 Turns #16 AWG, 1/2″ ID, 3/8″ Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801
C8
R1, R2 — 10 Ohms/2.0 W Carbon
T1 — RF Transformer, 1:25 Impedance Ratio. See M/A-COM
T1 — Application Note AN749, Figure 4 for details.
T1 — Ferrite Material: 2 Each, Fair–Rite Products
T1 — Corp. #2667540001
All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.
Figure 1. 30 MHz Test Circuit
REV 2
2