MRF148 Datasheet, PDF (3/6 Pages) Motorola, Inc – N-CHANNEL MOS LINEAR RF POWER FET

25
20
15
VDD = 50 V
IDQ = 100 mA
10
Pout = 30 W (PEP)
5
0
2
5
10
20
50
100
200
f, FREQUENCY (MHz)
Figure 2. Power Gain versus Frequency
60
40
VDD = 50 V
20
40 V
0
IDQ = 100 mA
60
40
VDD = 50 V
20
40 V
IDQ = 100 mA
0
0
0.5
1
1.5
2
2.5
Pin, INPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
– 30
2000
d3
– 40
d5
– 50
VDD = 50 V, IDQ = 100 mA, TONE SEPARATION 1 kHz
1000
– 30
VDS = 30 V
VDS = 15 V
– 40
d3
– 50
d5
0
0
10
20
30
40
0
Pout, OUTPUT POWER (WATTS PEP)
1
2
3
4
ID, DRAIN CURRENT (AMPS)
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain Frequency
versus Drain Current
+ BIAS
R2
0–6 V
C3
C2
RF INPUT
R1
C1
T1
L2
DUT
RFC1
C4
L1
+ 50 Vdc
+
C5
C7
C6
RF OUTPUT
C1 — 91 pF Unelco Type MCM 01/010
C2, C4 — 0.1 µF Erie Red Cap
C3 — Allen Bradley 680 pF Feed Thru
C5 — 1.0 µF, 50 Vdc Electrolytic
C6 — 15 pF Unelco Type J101
C7 — 24 pF Unelco Type MCM 01/010
L1 — 2 Turns #18 AWG, 5/16″ ID
L2 — 4 Turns #18 AWG, 5/16″ ID
R1 — 1.0 Ohm, 1/4 W Carbon
R2 — 2000 Ohm, 1/4 W Carbon
RFC1 — VK200 21/4B
T1 — 4:1 Transformer, 1.75″ Subminiature
T1 — Coaxial Cable
Figure 6. 150 MHz Test Circuit
Replaces MRF148/D
3
50 Ω
12.5 Ω
T1 — 4:1 Impedance Ratio
T1 — Transformer, Line
T1 — Impedance = 25 Ω